Silicon
Study findings from K. Ohdaira et al provide new insights into silicon
Published in Health and Medicine Week, December 13th, 2010
2010 DEC 13 -- According to recent research published in the Journal of Crystal Growth, "Flash lamp annealing (FLA) can form polycrystalline silicon (poly-Si) films with various microstructures depending on the thickness of precursor amorphous Si (a-Si) films due to the variation of crystallization mechanisms. Intermittent explosive crystallization (EC) takes place in precursor a-Si films thicker than approximately 2 mu m, and the periodicity of microstructure formed resulting from the intermittent EC is independent of the thickness of a-Si films if their thickness is 2 mu m or greater."
"In addition to the intermittent EC, continuous EC and...
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